TRANSISTOR
SERVICE(936) > COMPONENTS ACTIVE (287)
TRANSISTORS
BC517 NPN DARLINGTON TRANSISTOR ,40V, MAX Ic 1.2A/625mW
BC517 NPN Darlington Transistor is designed for very high amplification is required. NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516
BC517 NPN Darlington Transistor is designed for very high amplification is required. NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516
0.55 €(VAT incl.)
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TRANSISTORS
BFQ34 NPN 4GHz/2.2W RF TRANSISTOR
NPN 4 GHz wideband transistor
DESCRIPTION
18V/2.2W
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
NPN 4 GHz wideband transistor
DESCRIPTION
18V/2.2W
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
29.90 €(VAT incl.)
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TRANSISTORS
BFQ68 NPN 4GHz /4.5W RF TRANSISTOR
BFQ68 NPN 4GHz /4.5W RF TRANSISTOR
NPN 4 GHz wideband transistor
DESCRIPTION
18V/4.5W
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
BFQ68 NPN 4GHz /4.5W RF TRANSISTOR
NPN 4 GHz wideband transistor
DESCRIPTION
18V/4.5W
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
37.00 €(VAT incl.)
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TRANSISTORS
BGY36 VHF 20W POWER AMPLIFIER MODULE
VHF power amplifier module
Minimum frequency:144 MHz
Maximum frequency:174 MHz
Supply voltage:12.5 V
Input power:150 mW
Output power:20 W
Mode of operation:CW/FM
Max. frequency band: 140 - 180 MHz, output 16W
VHF power amplifier module
Minimum frequency:144 MHz
Maximum frequency:174 MHz
Supply voltage:12.5 V
Input power:150 mW
Output power:20 W
Mode of operation:CW/FM
Max. frequency band: 140 - 180 MHz, output 16W
118.00 €(VAT incl.)
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TRANSISTORS
2N2222A TRS NPN; bipolar; 40V; 0.6A
2N2222A Transistor: NPN; bipolar; 40V; 0.6A; 625mW; TO92
2N2222A Transistor: NPN; bipolar; 40V; 0.6A; 625mW; TO92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
2N2907A TRS PNP; bipolar; 60V; 0.6A
2N2907A Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
2N2907A Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
0.55 €(VAT incl.)
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TRANSISTORS
2N3055 NPN POWER TRANSISTOR TO-3
2N3055 TRANSISTOR SI-NPN 100V 15A 115W 800KHZ
Transistor type: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power: 115W
Case: TO3
2N3055 TRANSISTOR SI-NPN 100V 15A 115W 800KHZ
Transistor type: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power: 115W
Case: TO3
3.50 €(VAT incl.)
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TRANSISTORS
2N3904 NPN TRANSISTOR 40V/0.2A/0.3W TO92 PLASTIC CASE
Immediate availability
1.30 €(VAT incl.)
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TRANSISTORS
2N3906 PNP TRANSISTOR 40V/0.2A/0.3W TO92 PLASTIC CASE
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
2N5401 PNP TRANSISTOR 150V/0.6A/0.3W
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
2N5551 NPN TRANSISTOR 180V/0/6A/0.31W TO92 PLASTIC CASE
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
MRF247 VHF 75W POWER TRANSISTOR
MRF247 VHF POWER TRANSISTOR
Polarity: NPN
Output power: 75 W
Dissipated power (Ptot): 250 W
Collector current (Ic max): 20 A
Collector-emitter voltage (Vce max): 18 V
Supply voltage: 12.5 V
Mounting or package:flange
Frequency bands: VHF
CASE:316-01
MRF247 VHF POWER TRANSISTOR
Polarity: NPN
Output power: 75 W
Dissipated power (Ptot): 250 W
Collector current (Ic max): 20 A
Collector-emitter voltage (Vce max): 18 V
Supply voltage: 12.5 V
Mounting or package:flange
Frequency bands: VHF
CASE:316-01
26.00 €(VAT incl.)
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TRANSISTORS
2SC1815 NPN TRANSISTOR 60V/0.15A/0.4W TO92 PLASTIC CASE
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
2SC945 NPN TRANSISTOR 60V/0.1A/0.25W 250Mhz TO92 PLASTIC CASE
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
S8550 PNP TRANSISTOR 25V/0.5A/0.625W 150Mhz TO92 PLASTIC CASE
Type: PNP
Collector-Emitter Voltage, max: -25 V
Collector-Base Voltage, max: -40 V
Emitter-Base Voltage, max: -5 V
Collector Current − Continuous, max: -0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 85 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -65 to +150 °C
Package: TO-92
Type: PNP
Collector-Emitter Voltage, max: -25 V
Collector-Base Voltage, max: -40 V
Emitter-Base Voltage, max: -5 V
Collector Current − Continuous, max: -0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 85 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -65 to +150 °C
Package: TO-92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
S8050 NPN TRANSISTOR 25V/0.5A/0.625W TO92 PLASTIC CASE
Characteristics of S8050 Transistor
Type: NPN
Collector-Emitter Voltage, max: 25 V
Collector-Base Voltage, max: 40 V
Emitter-Base Voltage, max: 5 V
Collector Current − Continuous, max: 0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 85 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -65 to +150 °C
Package: TO-92
Characteristics of S8050 Transistor
Type: NPN
Collector-Emitter Voltage, max: 25 V
Collector-Base Voltage, max: 40 V
Emitter-Base Voltage, max: 5 V
Collector Current − Continuous, max: 0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 85 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -65 to +150 °C
Package: TO-92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
S9012 PNP TRANSISTOR 40V/500mA TO92 PLASTIC CASE
Characteristics of S9012 Transistor
Type: PNP
Collector-Emitter Voltage, max: -25 V
Collector-Base Voltage, max: -40 V
Emitter-Base Voltage, max: -5 V
Collector Current − Continuous, max: -0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 64 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Characteristics of S9012 Transistor
Type: PNP
Collector-Emitter Voltage, max: -25 V
Collector-Base Voltage, max: -40 V
Emitter-Base Voltage, max: -5 V
Collector Current − Continuous, max: -0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 64 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
S9013 PNP TRANSISTOR 25V/0.5A/0.625W TO92 PLASTIC CASE
Characteristics of S9013 Transistor
Type: NPN
Collector-Emitter Voltage, max: 25 V
Collector-Base Voltage, max: 45 V
Emitter-Base Voltage, max: 5 V
Collector Current − Continuous, max: 0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 64 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Characteristics of S9013 Transistor
Type: NPN
Collector-Emitter Voltage, max: 25 V
Collector-Base Voltage, max: 45 V
Emitter-Base Voltage, max: 5 V
Collector Current − Continuous, max: 0.5 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 64 to 300
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
S9014 NPN TRANSISTOR 45V/0.1A/0.4W TO92 PLASTIC CASE
Characteristics of S9014 Transistor
Type: NPN
Collector-Emitter Voltage, max: 45 V
Collector-Base Voltage, max: 50 V
Emitter-Base Voltage, max: 5 V
Collector Current − Continuous, max: 0.1 A
Collector Dissipation: 0.4 W
DC Current Gain (hfe): 60 to 1000
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Characteristics of S9014 Transistor
Type: NPN
Collector-Emitter Voltage, max: 45 V
Collector-Base Voltage, max: 50 V
Emitter-Base Voltage, max: 5 V
Collector Current − Continuous, max: 0.1 A
Collector Dissipation: 0.4 W
DC Current Gain (hfe): 60 to 1000
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
S9015 PNP TRANSISTOR 45V/0.1A/0.4W TO92 PLASTIC CASE
Characteristics of S9015 Transistor
Type: PNP
Collector-Emitter Voltage, max: -45 V
Collector-Base Voltage, max: -50 V
Emitter-Base Voltage, max: -5 V
Collector Current − Continuous, max: -0.1 A
Collector Dissipation: 0.4 W
DC Current Gain (hfe): 60 to 1000
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Characteristics of S9015 Transistor
Type: PNP
Collector-Emitter Voltage, max: -45 V
Collector-Base Voltage, max: -50 V
Emitter-Base Voltage, max: -5 V
Collector Current − Continuous, max: -0.1 A
Collector Dissipation: 0.4 W
DC Current Gain (hfe): 60 to 1000
Transition Frequency, min: 150 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
S9018 NPN TRANSISTOR 30V/0.02A/0.625W TO92 PLASTIC CASE
Characteristics of S9018G Transistor
Type: NPN
Collector-Emitter Voltage, max: 30 V
Collector-Base Voltage, max: 40 V
Emitter-Base Voltage, max: 4 V
Collector Current − Continuous, max: 0.02 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 72 to 108
Transition Frequency, min: 500 MHz
Noise Figure, max: 4 dB
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Characteristics of S9018G Transistor
Type: NPN
Collector-Emitter Voltage, max: 30 V
Collector-Base Voltage, max: 40 V
Emitter-Base Voltage, max: 4 V
Collector Current − Continuous, max: 0.02 A
Collector Dissipation: 0.625 W
DC Current Gain (hfe): 72 to 108
Transition Frequency, min: 500 MHz
Noise Figure, max: 4 dB
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92
Immediate availability
1.00 €(VAT incl.)
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TRANSISTORS
2SA1015 PNP TRANSISTOR 50V/0.15A/0.4W TO92 PLASTIC CASE
Immediate availability
1.00 €(VAT incl.)
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